Work function of Ni silicide phases on HfSiON and SiO₂ : NiSi, Ni₂Si, Ni₃₁Si₁₂, and Ni₃Si fully silicided gatesKITTL, J. A; PAWLAK, M. A; ABSIL, P et al.IEEE electron device letters. 2006, Vol 27, Num 1, pp 34-36, issn 0741-3106, 3 p.Article

Work function engineering by FUSI and its impact on the performance and reliability of oxynitride and Hf-silicate based MOSFETsVELOSO, A; ANIL, K. G; JURCZAK, M et al.International Electron Devices Meeting. 2004, pp 855-858, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

Minimization of MuGFET source/drain resistance using wrap-around NiSi-HDD contactsDIXIT, A; ANIL, K. G; COLLAERT, N et al.Solid-state electronics. 2006, Vol 50, Num 7-8, pp 1466-1471, issn 0038-1101, 6 p.Article

Performance improvement of tall triple gate devices with strained SiN layersCOLLAERT, N; DE KEERSGIETER, A; ABSIL, P et al.IEEE electron device letters. 2005, Vol 26, Num 11, pp 820-822, issn 0741-3106, 3 p.Article

Influence of activation annealing and silicidation process on as redistribution and pile-up at the Ni_xSi_y/SiO₂ interfacePAWLAK, M. A; KITTL, J. A; VANTOMME, A et al.Proceedings - Electrochemical Society. 2005, pp 241-248, issn 0161-6374, isbn 1-56677-463-2, 8 p.Conference Paper

Minimization of specific contact resistance in multiple gate NFETs by selective epitaxial growth of Si in the HDD regionsDIXIT, A; ANIL, K. G; ROOYACKERS, R et al.Solid-state electronics. 2006, Vol 50, Num 4, pp 587-593, issn 0038-1101, 7 p.Conference Paper

MBE-grown vertical power-MOSFETs with 100-nm channel lengthFINK, C; ANIL, K. G; HANSCH, W et al.Thin solid films. 2000, Vol 380, Num 1-2, pp 207-210, issn 0040-6090Conference Paper

Low dose radiation sensor for medical therapy applicationsANIL, K. G; VASI, J; LAL, R et al.SPIE proceedings series. 1998, pp 1145-1148, isbn 0-8194-2756-X, 2VolConference Paper

Implications of fin width scaling on variability and reliability of high-k metal gate FinFETsCHABUKSWAR, S; MAJI, D; MANOJ, C. R et al.Microelectronic engineering. 2010, Vol 87, Num 10, pp 1963-1967, issn 0167-9317, 5 p.Article

Shift and ratio method revisited: extraction of the fin width in multi-gate devicesCOLLAERT, N; DIXIT, A; ANIL, K. G et al.Solid-state electronics. 2005, Vol 49, Num 5, pp 763-768, issn 0038-1101, 6 p.Article

Materials issues of Ni fully silicided (FUSI) gates for CMOS applicationsKITTL, J. A; LAUWERS, A; KUBICEK, S et al.Proceedings - Electrochemical Society. 2005, pp 225-232, issn 0161-6374, isbn 1-56677-463-2, 8 p.Conference Paper

Modulation of the workfunction of Ni fully silicided gates by doping : Dielectric and silicide phase effectsPAWLAK, M. A; LAUWERS, A; JANSSENS, T et al.IEEE electron device letters. 2006, Vol 27, Num 2, pp 99-101, issn 0741-3106, 3 p.Article

On the impact of TiN film thickness variations on the effective work function of poly-Si/TiN/SiO₂ and poly-Si/TiN/HfSiON gate stacksSINGANAMALLA, R; YU, H. Y; POURTOIS, G et al.IEEE electron device letters. 2006, Vol 27, Num 5, pp 332-334, issn 0741-3106, 3 p.Article

Phase effects and short gate length device implementation of Ni fully silicided (FUSI) gatesKITTL, J. A; PAWLAK, M. A; RICHARD, S et al.Microelectronic engineering. 2006, Vol 83, Num 11-12, pp 2117-2121, issn 0167-9317, 5 p.Conference Paper

Optimization of the channel doping profile of vertical sub-100 nm MOSFETsKAESEN, F; FINK, C; ANIL, K. G et al.Thin solid films. 1998, Vol 336, Num 1-2, pp 309-312, issn 0040-6090Conference Paper

Ni fully silicided gates for 45 nm CMOS applicationsKITTI, Jorge A; LAUWERS, Anne; DE POTTER, Muriel et al.Microelectronic engineering. 2005, Vol 82, Num 3-4, pp 441-448, issn 0167-9317, 8 p.Conference Paper

Diffusion-less junctions and super halo profiles for PMOS transistors formed by SPER and FUSI gate in 45 nm physical gate length devicesSEVERI, S; ANIL, K. G; CAMILLE-CASTILLO, R. A et al.International Electron Devices Meeting. 2004, pp 99-102, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

Optimization of breakdown behaviour and short channel effects in MBE-grown vertical MOS-devices with local channel dopingFINK, C; ANIL, K. G; GEIGER, H et al.Thin solid films. 2000, Vol 369, Num 1-2, pp 383-386, issn 0040-6090Conference Paper

Demonstration of fully Ni-silicided metal gates on HfO₂ based high-k gate dielectrics as a candidate for low power applicationsANIL, K. G; VELOSO, A; BIESEMANS, S et al.Symposium on VLSI Technology. sd, pp 190-191, isbn 0-7803-8289-7, 1Vol, 2 p.Conference Paper

Dietary trans Fatty Acid Isomers Differ in Their Effects on Mammary Lipid Metabolism As Well As Lipogenic Gene Expression in Lactating MiceKADEGOWDA, Anil K. G; CONNOR, Erin E; TETER, Beverly B et al.The Journal of nutrition. 2010, Vol 140, Num 5, pp 919-924, issn 0022-3166, 6 p.Article